| High-speed characteristics of tunneling injection and excited-state emitting InAs/GaAs quantum dot lasers |
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| Polarization properties of retroreflecting right-angle prisms |
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| In-line broadband 270° (3λ/4) chevron four-reflection wave retarders |
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| Broadband IR polarizing beam splitter using subwavelength-structured one-dimensional photonic-crystal layer embedded in high-index prism |
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| Design principles for quarter-wave retarders that employ total internal reflection and light interference in a single-layer coating |
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| Investigations of a 2.9 GHz Resonant Microwave sensitive Ag/MgO/Ge/Ag Tunneling Diodes |
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| Performance of the Au/MgO/Ni photovoltaic devices |
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| Fabrication and Characterization of Ag/BN/Ni Microwave Rejection-Band Filters |
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| Current transport mechanism in Au-p-MgO-Ni Schottky device designed for microwave sensing |
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| Effect of Laser Excitation and Temperature s on The Ag/GaSe0.5S0.5/C Microwave Filters |
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| Analysis of the Junction Properties of C/GaSe0.5S0.5/C Back-to-Back Schottky-Type Photodetectors |
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| Design and Applications of Al/InSe/BN/Ag Hybrid Device |
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| Properties of Hf-doped Bi1.5Zn0.92Nb1.5O6.92 (BZN) ceramic varicaps |
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| MgO/GaSe0.5S0.5 Heterojunction as Photodiodes and Microwave Resonators |
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| Optical Conduction in Amorphous GaSe Thin Films |
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| Polarization sensitive reflection and dielectric spectra in GaSe thin films |
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| Design and Performance of (Au,Yb)/ZnS/InSe/C Heterojunctions as Plasmon Resonators, Photodetectors and Microwave Cavities |
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| Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces |
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| Impact of Yb, In, Ag and Au thin film substrates on the crystalline nature, Schottky barrier formation and microwave trapping properties of Bi2O3 films |
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| Design and Applications of Yb/Ga2Se3/C Schottky Barriers |
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| Characterization of CdS/Sb2Te3 micro/nano-interfaces |
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| Design and characterization of Au/In4Se3/Ga2S3/C field effect transistors |
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| Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices |
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| Optoelectronic properties of the InSe/Ga2S3 interfaces |
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| Impact of Mg layer thickness on the performance of the Mg/Bi2O3 plasmonic interfaces |
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| Structural and optical properties of Cu2Se/Yb/Cu2Se thin films |
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| Gd and Tb doping effects on the physical properties of Nd2Sn2O7 |
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| Negative Capacitance Effect in Ag/α-In2Se3/CdS/CdSe/C Dual Band Stop Filters |
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| Enhancement of the performance of the Cu2Se band filters via Yb nanosandwiching |
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| Formation Mechanism, Structural and Optoelectronic Properties of As2Se3/CdS Heterojunctions Prepared by Physical Vapor Deposition Technique |
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| Structural and electrical characterizations of the as grown and annealed Au/MοO3/ In/MoO3/C bandpass filters |
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| Post annealing effects on the structural and optical properties of MoO3 sandwiched with indium slabs |
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| Optical dynamics at the MoO3/ZnPc interfaces prepared for visible light communications |
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| Samarium and yttrium doping induced phase transitions and their effects on the structural, optical and electrical properties of Nd2Sn2O7 ceramics |
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| Design and Characterization of Yb/p-SiO2/(Yb, In) Thin-film Transistors for 5G Resonators |
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| Design and Characterization of Au/CdSe/GeO 2/C MOSFET Devices |
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| Band offsets, dielectric dispersion and some applications of CdSe/GeO2 heterojunctions |
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| Role Of Au Nanosheets In Enhancing The Performance Of Yb/Zns/Cds/Au Tunneling Photosensors |
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| Design and Characterization of MoO3/Mg/MoO3 Interfaces |
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| Al/MoO3/ZnPc/Al Broken Gap Tunneling Hybrid Devices Design for IR Laser Sensing and Microwave Filtering |
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| Design and characterization of Ge/SeO2 heterojunctions as tunneling thin film transistors |
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| Preparation and Characterization of Orthorhombic AgMn Alloys by the Pulsed Laser Welding Technique |
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| Growth and characterization of PbSe microcrystals via the pulsed laser welding technique |
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| Lead selenide microcrystals fabricated by the pulsed laser welding technique employed as 6G technology microwave resonators and as MOS capacitors |
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| Pt/PbSe optoelectronic receivers designed for 6G and terahertz communication technologies |
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| Voltage and frequency controlled Ge/SeO 2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources |
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| Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters |
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| Characterization of PbWO4 thin films formed by the pulsed laser welding technique |
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| Effect of Ag 2 O nanosheets thickness on the performance of Al/GeO 2/Ag 2 O/GeO 2/C multifunctional electronic devices. |
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| Fabrication and characterization of lead selenide thin film as X-ray sensors, photovoltaic devices and microwave resonators |
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| La/Ge stacked nanosheets designed as optical resonators, microwave oscillators and 5 G/6 G gigahertz receivers |
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| Lead Selenide Thin Films Designed for Laser Sensing and Visible Light Communications |
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| Growth and Characterization of Lanthanum Germanide Thin Films by the Thermal Evaporation Technique |
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| Formation, Enhanced Crystallization, Optical Absorption and Electrical Conduction in Copper Indium Selenide Thin Films Prepared via Pulse Laser Welding Technique |
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| Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties |
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