PbSe microcrystals are fabricated by the pulsed laser welding technique in Ar atmosphere within 2 min. The microcrystals showed cubic structural phases of PbSe in addition to tetragonal SeO2. PbSe microcrystals exhibited layered structure composed of 200 nm thick layers. Electrical characterization on these crystals (Ag/PbSe/Ag) revealed tunneling type current-voltage characteristics. Large resistive response to an imposed ac signal in the microwave frequency domain has been shown. In addition, the cutoff frequency () spectra displayed value larger than 100 GHz nominating the devices for 6G technology applications. Moreover, investigations on the current conduction mechanism have shown the preferred current conduction by quantum mechanical tunneling accompanied with correlated barrier hopping. On the other hand, measurements of the capacitance-voltage characteristics in the frequency domain of 1.0–100 MHz showed performance of the Ag/PbSe/Ag structures as a metal-oxide- semiconductors (MOS) devices suitable for energy storage at ultrashort times.