Voltage and frequency controlled Ge/SeO 2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources

Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO 2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features
of the Ge/SeO 2 devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillator.