| Impact of Yb, In, Ag and Au thin film substrates on the crystalline nature, Schottky barrier formation and microwave trapping properties of Bi2O3 films |
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| Effect of ytterbium, gold and aluminum transparent metallic substrates on the performance of the Ga2S3 thin film devices |
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| Plasmon Interactions at the (Ag, Al)/InSe Thin-Film Interfaces Designed for Dual Terahertz/Gigahertz Applications |
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| Al/CdSe/GaSe/C resonant tunneling thin film transistors |
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| Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces |
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| Impedance Spectroscopic Analysis of the InSe/ZnSe/InSe Interface |
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| Design and performance of Yb/ZnS/C Schottky barriers |
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| Mechanical and electrical properties of Bi1.5-xLaxZn0.92Nb1.5O6.92 pyrochlore ceramics |
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| Structural, optical and electrical properties of YbInSe thin films |
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| Current transport mechanism in Au-p-MgO-Ni Schottky device designed for microwave sensing |
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| Band offsets and optical conduction in the CdSe/GaSe interface |
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| Properties of Se/InSe Thin-Film Interface |
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| Absorption and optical conduction in InSe/ZnSe/InSe thin film transistors |
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| Optical interactions in the InSe/CdSe interface |
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| MgO/GaSe0.5S0.5 Heterojunction as Photodiodes and Microwave Resonators |
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| Physical properties of the Bi1.5Zn0.92-2xHfxNb1.5O6.92 solid solutions |
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| Optical conduction in amorphous GaSe thin films |
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| Physical Design and Dynamical Analysis of Resonant-Antiresonant Ag/MgO/GaSe/Al Optoelectronic Microwave Devices |
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| Characterization of the MgO/GaSe0.5S0.5 heterojunction designed for visible light communications |
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| Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices |
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| Spectral Dynamics of the n-InSe/p-BN Heterojunction |
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| Post annealing effects on the structural, compositional, optical and dielectric properties of Cd doped GaSe thin films |
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| Thermally assisted variable range hopping in Tl4S3Se crystal |
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| Design and Applications of Al/InSe/BN/Ag Hybrid Device |
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| Analysis of the Junction Properties of C/GaSe0.5S0.5/C Back-to-Back Schottky-Type Photodetectors |
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| p-TlGaSeS/n-BN heterojunction as a microwave filter and as a photovoltaic device |
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| Optical characterization of the MgO/InSe interface |
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| Optical analysis of Ge/MgO and Ge/BN thin layers designed for terahertz applications |
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| Photon assisted hopping conduction mechanism in Tl2SSe crystals |
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| Energy Band Diagram And Current Transport Mechanism In p-MgO/n-Ga4Se3S |
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| Performance of the Au/MgO/Ni photovoltaic devices |
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| Effects of Laser Excitation and Temperature on Ag/GaSe0.5S0.5/C Microwave Filters |
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| Electrical characterization of Bi1.50-xYxZn0.92Nb1.5O6.92 varactors |
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| Electrical parameters of Al/InSe/C RF sensors |
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| Dielectric and photo-dielectric properties of TlGaSeS crystals |
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| Dielectric dispersion and energy band gap of Bi1.5-xSmxZn0.92Nb1.5O6.92 solid solution |
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| Electrical conductivity and capacitance spectra of Bi1.37Sm0.13Zn0.92Nb1.50O6.92 pyrochlore ceramic in the range of 0-3 GHz |
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| Optical dynamics of MgO/Ga4Se3S interface |
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| Cobalt Doping Effects on the Mechanical and Electrical Parameters of Bi1.5Zn0.92Nb1.5O6.92 Solid Solution |
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| Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes |
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| Effect of yttrium solubility on the structural and optical properties of Bi1.5-xYxZn0.92Nb1.5O6.92 pyrochlore ceramics |
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| Investigation of the physical properties of Bi1.5-xCdxZn0.92Nb1.5O6.92-x/2 pyrochlore ceramics |
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| Mixed conduction and anisotropic single oscillator parameters in low dimensional TlInSe2 crystals |
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| Fabrication of Al/MgO/C and C/MgO/InSe/C tunneling barriers for tunable negative resistance and negative capacitance applications |
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| Illumination Effects on the Capacitance Spectra and Signal Quality Factor of Al/InSe/C Microwave Sensors |
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| Hall mobility and photoconductivity in TlGaSeS crystals |
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| Driving electric field effects on the space charge limited photocurrent of In6S7 |
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| Effect of ionic substitution on the structural, dielectric and electrical properties of bismuth zinc niobate ceramics |
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| Investigation of the electrical parameters of Ag/p-TlGaSeS/C Schottky contacts |
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| Temperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystals |
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| Photovoltaic Effect and Space Charge Limited Current Analysis in TlGaTe2 Crystals |
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| Synthesis and characterization of Bi1.5Zn0.92Nb1.5-xSnxO6.92-x/2 pyrochlore ceramics |
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| Dynamical and passive characteristics of the Ag/TlGaSeS/Ag RF resonators |
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| Structural, optical, electrical and dielectric properties of Bi1.5Zn0.92Nb1.5-xNixO6.92-3x/2 solid solution |
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| Structural, electrical and dielectric properties of Bi1.5Zn0.92Nb1.5-xTaxO6.92 pyrochlore ceramics |
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| Transient and steady state photoelectronic analysis in TlInSe2 crystals |
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| Light intensity effects on electrical properties of AgIn5S8 thin films |
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| Design and characterization of TlInSe2 varactor devices |
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| Characterization of Ag/TlInSe2/Ag structure |
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| Growth and characterization of Tl3InSe4 single crystals |
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| Heat treatment effects on the structural and electrical properties of thermally deposited AgIn5S8 thin films |
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| Temperature effects on the optoelectronic properties of AgIn5S8 thin films |
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| Photoconductivity kinetics in AgIn5S8 thin films |
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| Energy band gap and dispersive optical parameters in Bi1.5Zn0.92Nb1.5O6.92 pyrochlore ceramics |
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| Influence of photonic excitations on the electrical parameters of TlInS2 crystals |
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| Properties of Tl4Se3S single crystals and characterization of Ag/Tl4Se3S Schottky barrier diodes |
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| Anisotropic electrical and dispersive optical parameters in InS layered crystals |
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| Effects of photoexcitation on the current transport mechanism in amorphous indium selenide thin films |
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| Optoelectronic properties of Tl3InSe4 single crystals |
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| Transport and recombination kinetics in TlGaTe2 crystals |
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| Structural, electrical and anisotropic properties of Tl4Se3S chain crystals |
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| Hole-polar phonon interaction scattering mobility in chain structured TlSe0.75S0.25 crystals |
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| Analysis of the Hall effect in TlGaTe2 single crystals |
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| Temperature- and photo-excitation effects on the electrical properties of Tl4Se3S crystals |
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| Dark electrical conductivity and photoconductivity of Ga(4)Se(3)S layered single crystals |
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| Hopping conduction in Ga4Se3S layered single crystals |
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| Structural, compositional and optical properties of gallium selenide thin films doped with cadmium |
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| Optoelectronic properties of Ga(4)Se(3)S-layered single crystals |
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| Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements |
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| Crystal data and indirect optical transitions in Tl2InGaSe4 crystals |
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| Annealing effects on the structural and optical properties of AgIn5S8 thin films |
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| Electron-lattice interaction scattering mobility in Tl(2)InGaSe(4) single crystals |
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| Dispersive optical constants of thermally deposited AgIn5S8 thin films |
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| Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals |
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| Dispersive optical constants of Tl2InGaSe4 single crystals |
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| Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals |
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| Crystal data and some physical properties of Tl2InGaTe4 crystals |
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| Temperature dependence of the band gap, refractive index and single-oscillator parameters of amorphous indium selenide thin films |
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| Optical properties of Tl2InGaS4 layered single crystal |
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| Energy band gap and oscillator parameters of Ga4Se3S single crystals |
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| Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals |
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| Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements |
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| Photoelectronic and electrical properties of Tl2InGaS4 layered crystals |
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| Acoustic phonons scattering mobility and carrier effective mass in In6S7 crystals |
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| Temperature dependence of the direct allowed transitions band gap and optical constants of polycrystalline alpha-In2Se3 thin films |
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| Optical properties of TlInS2 layered single crystals near the absorption edge |
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| Fabrication and characterization of TO/GaSe/(Ag, Au) Schottky diodes |
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| Light illumination effect on the electrical and photovoltaic properties of In6S7 crystals |
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| Optoelectronical properties of polycrystalline beta-GaSe thin films |
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| Etectron-phonon short-range interactions mobility and p- to n-type conversion in TlGaS2 crystal |
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| Temperature and magnetic field effects on the carrier density and Hall mobility of boron-doped Tl-Ba-Ca-Cu-O superconductor |
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| Optoelectronic and electrical properties of TlGaS2 single crystal |
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| Optoelectronic and electrical properties of TlGaS2 single crystal |
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| Dispersive optical constants and temperature-dependent band gap of cadmium-doped indium selenide thin films |
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| Refractive index, band gap and oscillator parameters of amorphous GaSe thin films |
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| Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals |
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| Synthesis and characterization of Mg2B2O5 |
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| Fabrication and some physical properties of AgIn5S8 thin films |
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| Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals |
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| Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements |
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| Hall effect, space-charge limited current and photoconductivity measurements on TlGaSe2 layered crystals |
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| Electrical, optical and photoconductive properties of poly(dibenzo-18-crown-6) |
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| Photoelectronic, optical and electrical properties of TlInS2 single crystals |
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| Growth, electrical and structural characterization of beta-GaSe thin films |
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| Photoelectronic and electrical properties of CuIn5S8 single crystals |
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| Carrier transport properties of InS single crystals |
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| Preparation and characterization of conducting polybutadiene/polythiophene composites |
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| Photoelectronic and electrical properties of InS crystals |
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| Investigation of localized levels in GaS0.5Se0.5 layered crystals by means of electrical, space-charge limited current and photoconductivity measurements |
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| Cd-doping effects on the properties of polycrystalline alpha-In2Se3 thin films |
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| Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals |
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| Crystal data, electrical resistivity, and Hall mobility of n-type AgIn5S8 single crystals |
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| Crystal data, photoconductivity and carrier scattering mechanisms in CuIn5S8 single crystals |
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| Characterization of p-In2Se3 thin films |
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| Structural and electrical properties of Cd doped InSe thin films |
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| Temperature effects on the properties of Ge thin films |
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| Design and performance of Yb/ZnS/C Schottky barriers |
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| Plasmon-electron dynamics at the Au/InSe and Y/InSe interfaces designed as dual gigahertz-terahertz filters |
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| Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces |
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| Design and Applications of Yb/Ga2Se3/C Schottky Barriers |
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| Design and Characterization of the Ge/Ga2S3 Heterojunction |
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| Growth and characterization of InSe/Ge/InSe interfaces |
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| Effect of Au nanosandwiching on the structural, optical and dielectric properties of the as grown and annealed InSe thin films |
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| Temperature effects on the structural and optical properties of the TlInSe2xS2(1x) mixed crystals (x ¼ 0:3) |
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| Dielectric Dispersion in Ga2S3 Thin Films |
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| Engineering the Optical and Dielectric Properties of the Ga2S3/In/Ga2S3 Nanosandwiches via Indium Layer Thickness |
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| Physical properties of neodymium tin oxide pyrochlore ceramics |
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| Effect of Indium nano-sandwiching on the structural and optical performance of ZnSe films |
|
| Structural and optical properties of the ZnS/GaSe heterojunctions |
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| Design of the ZnS/Ge/GaSe pn interfaces as plasmonic, photovoltaic and microwave band stop filters |
|
| Investigation of the physical properties of the Yb nanosandwiched CdS films |
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| Characterization of the nanosandwiched Ga2S3/In/Ga2S3 interfaces as microwave filters and thermally controlled electric switches |
|
| Enhancement of photoconductive performance of CdSe via Yb nanosandwiching |
|
| Design and characterization of Au/In4Se3/Ga2S3/C field effect transistors |
|
| Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices |
|
| Design and characterization of MoO3/CdSe heterojunction |
|
| Investigation of the physical properties of the Yb nanosandwiched CdS films |
|
| Investigation of the structural and optoelectronic properties of the Se/Ga2S3 heterojunctions |
|
| Effect of Au/Ge substrate on the properties of GaSe |
|
| Dielectric and Optoelectronic Properties of InSe/CdS/CdSe Heterojunctions |
|
| Temperature-dependent structural transition, electronic properties and impedance spectroscopy analysis of Tl2InGaS4 crystals grown by the Bridgman method |
|
| Characterization of the Al/Ge/In2Se3/Ga2S3/Al hybrid tunneling barriers designed for Gigahertz/Terahertz applications |
|
| Gd and Tb doping effects on the physical properties of Nd2Sn2O7 |
|
| Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices |
|
| Design and characterization of Au/In4Se3/Ga2S3/C field effect transistors |
|
| Optical dynamics in the Ag/-Ga2S3 layer system |
|
| Dielectric dispersion in InSe/CdS bilayers |
|
| Gold and ytterbium interfacing effects on the properties of the CdSe/Yb/CdSe nanosandwiched structures |
|
| Enhancement of photoconductive performance of CdSe via Yb nanosandwiching |
|
| Design and characterization of MoO3/CdSe heterojunctions |
|
| Negative Capacitance Effect in Ag/a-In2Se3/CdS/CdSe/C Dual Band Stop Filters |
|
| FORMATION AND NEGATIVE CAPACITANCE EFFECT IN Au/Bi2O3/ZnS/Ag HETEROJUNCTIONS DESIGNED AS MICROWAVE RESONATORS. |
|
| Effects of Ge substrate on the structural and optical conductivity parameters of Bi2O3 thin films |
|
| Characterization of Bi2O3/ZnS heterojunctions designed for visible light communications |
|
| Performance of the Yb/n-CdSe/C Tunneling Barriers |
|
| Formation and Characterization of Cd2S3 Polycrystalline Films onto Glass and Lanthanum Substrates |
|
| In situ observations of the permanent structural modifications, phase transformations and band gap narrowing upon heating of Cu2Se/Yb/Cu2Se films |
|
| EFFECT OF Y, Au AND YAu NANOSANDWICHING ON THE STRUCTURAL, OPTICAL AND DIELECTRIC PROPERTIES OF ZnSe THIN FILMS |
|
| Structural and Optoelectronic Properties of MoO3/CuSe Interfaces |
|
| Enhancement of the performance of the Cu2Se band filters via Yb nanosandwiching |
|
| Fabrication and characterization of Yb/MoO3/(C,Yb) devices |
|
| Structural, Optical, Dielectric and Electrical Properties of Al-Doped ZnSe Thin Films |
|
| ZnSe/Al/ZnSe nanosandwiched structures as dual Terahertz –Gigahertz signal receivers |
|
| Characterization of the Ge/Bi2 O3 Interfaces |
|
| Structural and optoelectronic properties of CdS/Y/CdS thin films |
|
| Formation, negative capacitance and negative conductance effects in Selenium stacked layers sandwiched with Ag nanosheets |
|
| Effect of lithium nanosandwiching on the structural, optical and dielectric performance of MoO3 |
|
| In situ monitoring of the permanent crystallization, phase transformations and the associated optical and electrical enhancements upon heating of Se thin films |
|
| EFFECT OF INSERTION OF ALUMINUM NANOSHEETS ON THE STRUCTURAL, OPTICAL AND DIELECTRIC PROPERTIES OF STACKED LAYERS OF SELENIUM |
|
| Exploring the Optical Dynamics in the ITO/As2Se3 Interfaces |
|
| Enhancements of Light Absorbability, Optical Conductivity and Terahertz Cutoff Frequency in Stacked Layers of Selenium via Ag Nanoslabs Sandwiching |
|
| Structural and electrical characterizations of the as grown and annealed Au/MοO3/ In/MoO3/C bandpass filters |
|
| Structural and dielectric performance of the Ba(Zn1/3Nb2/3-xSbx)O3 perovskite ceramics |
|
| Engineering the structural, optical and dielectric properties of ZnSe thin films via Aluminum nanosandwiching |
|
| In situ monitoring of heat assisted oxidation and its effects on the structural, dielectric and optical conductivity parameters of Pb thin films as promising terahertz transmitters |
|
| In Situ Observation of Heat-Assisted Hexagonal-Orthorhombic Phase Transitions in Se/Ag/Se Sandwiched Structures and Their Effects on Optical Properties |
|
| Characterization of Au/As2Se3/MoO3/Ag hybrid devices designed for dual optoelectronic applications |
|
| Pseudodielectric dispersion in As2Se3 thin films |
|
| Post annealing effects on the structural and optical properties of MoO3 sandwiched with indium slabs |
|
| Thickness effects on the dielectric dispersion and optical conductivity parameters of CuO thin films |
|
| Tungsten doped Bi1. 5Zn0. 92Nb1. 5O6. 92 ceramics designed as radio/microwave band pass/reject filters. |
|
| Tungsten doped Bi1. 5Zn0. 92Nb1. 5O6. 92 ceramics designed as radio/microwave band pass/reject filters. |
|
| Al/CdSe/GaSe/C resonant tunneling thin film transistors |
|
