Growth and characterization of Sb2Te3 thin films onto Se substrates as photovoltaic interface

Owing to its smart properties as a phase change memory device, here in this project, the Sb2Te3 thin films will be deposited onto a photovoltaic Se substrate. The Se/Sb2Te3 interface will be characterized by means of X-ray diffraction, scanning electron microscopy, energy dispersion X-ray analysis, optical spectroscopy, dark and photo illuminated current-voltage characteristics. To determine the crystalline nature of the resulting films, the lattice mismatch and morphology (will be investigated) . The attenuations in the optical parameters like absorbability that are associated with the interfacing will be explored. In addition, the photo resistive switching phenomena in the Sb2Te3 films will be tested and evaluated. Moreover, the impedance spectroscopy of the interface will be studied at particular frequencies up to 1.8 GHz to observe the parallel and serial resonance frequency switching bandwidth as it provide information about the data transfer rates. The impedance data will also be employed to investigate the reflection coefficient, return loss and voltage standing wave ratio of the Se/Sb2Te3 as a promising  band pass/reject filter. Furthermore, some physical treatments on the interface will be carried out to allow better performance for particular applications. The newly designed Se/Sb2Te3 interface is dreamed to allow wide tunability in memory switching via photoexcitation.