Owing to their novel applications as high gate dielectric materials, we aim to explore some important properties of the lanthanum doped Bi1.5Zn0.92Nb1.5O6.92 (La-BZN) pyrochlore ceramics. Particularly, we plan to investigate the temperature effects on the structural properties of the La-BZN in the temperature range of 300-473 K by the X-ray diffraction technique (XRD). The temperature dependent XRD analysis will be employed to determine the temperature effects on the lattice parameters, grain size, micro strain, dislocation density and degree of orientation. In addition, the room temperature impedance spectroscopy will be recorded in the frequency range of 10-1800 MHz. The measurements will provide information about the doping effects on the dielectric properties in this frequency domain. Some of the physical parameters like capacitance, conductance, reflection coefficient, return loss, voltage standing wave ratio that are needed for using the La-BZN as an active resonator in telecommunication technology will be investigated as function of temperature to predict the best doping content for using this material as microwave resonators.

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