Impact of Indium Nano-Layers on the Physical Properties of Ga2S3 Thin Films

In this project an indium metallic nano- layers of thickness of 20, 50, 100 and 200 nm will be sandwiched between two 500 nm thick Ga2S3 thin films by the physical vapor deposition technique under vacuum pressure of 10-5 torr.  The effect of the In metal nanolayers on the structural, optical, dielectric and electrical properties will be investigated by means of X-ray diffraction, scanning electron microscopy attached to dispersive X-ray analyzer (SEM/EDXA), ultraviolet-visible light spectrophotometry, impedance spectroscopy and electrical conductivity measurements. These techniques which are available at the AAUJ research laboratories will be employed to explore the changes in the crystalline nature and morphology, energy band gap, energy band tails, the real and imaginary parts of the dielectric  spectra, the electrical conductivities, the shifts in the Fermi level and activation energies. In addition, the imaginary part of the dielectric spectra will be modeled to determine, the electron-plasmon interactions scattering times, the Plasmon frequency, the free electron density, the bounded electron frequency and the drift mobility. These parameters will represent the key for employing the Ga2S3 dielectric slabs in optoelectronic technology.