Physical characterization and applications of TlInS2xSe2(1-x) single crystals

In this work, The TlInS2xSe2(1-x) are studied by means of temperature dependent X-ray diffraction technique, scanning electron microscopy attached to dispersive X-ray analyzer (SEM/EDXA), optical spectrophotometry, impedance spectroscopy, current- voltage   characteristics and photo-illumination  techniques. The measurements will allow investigation of the temperature effects in the range of 30-200 oC on the micro-strain, degree of orientation, dislocation density  and lattice parameters. In addition, the effect of the temperature on the dielectric constant and on the electrical conductivity   will be explored and explained in the light of the X-ray predictions. Moreover, some particular applications like Schottky barrier and photo sensor/conductor    formation will be considered. The devices will be subjected to dark and illuminated dc signal analysis to investigate the its rectification ratio (switching),  the photo-responsivity and external quantum efficiency under the exposer to laser light of 406, 632 and 850 nm wavelengths. Furthermore, the resulting devices will be subjected to ac signal imposing to reveal its impedance spectroscopy in the frequency range of 10-1800 MHz. The study will identify the resonance positions of these crystals as promising candidates for use as microwave cavities.